English
Spain
Rusia
Italy
China2SD1062R
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SD1062R
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 12 A 10MHz 1.75 W Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
398
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 300mA, 6A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
1.75 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SD1062R
2156-2SD1062R
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1062R
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Bulk
MinMultiplikator: 398
Verpackung: Bulk
MinMultiplikator: 398
Stellvertreter
-