English
Spain
Rusia
Italy
ChinaIRF6668TR1PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6668TR1PBF
BESCHREIBUNG
MOSFET N-CH 80V 55A DIRECTFET MZ
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6668TR1PBFCT
IRF6668TR1PBFDKR
SP001564776
IRF6668TR1PBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6668TR1PBF
Dokumente und Medien
Datasheets
1(IRF6668(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6668(TR)PbF)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF6668TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 17,338
Einzelpreis. : $1.95000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 17,338
Einzelpreis. : $1.95000
Ersatztyp. : Parametric Equivalent