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ChinaIXTY1N120P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTY1N120P
BESCHREIBUNG
MOSFET N-CH 1200V 1A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 1A (Tc) Surface Mount TO-252AA
HERSTELLER
IXYS
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IXTY1
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTY1N120P
Dokumente und Medien
Datasheets
1(Building, Home Automation Appl Guide)
Environmental Information
1(Ixys IC REACH)
Menge Preis
QUANTITÄT: 350
Einzelpreis: $2.17303
Verpackung: Tube
MinMultiplikator: 350
Verpackung: Tube
MinMultiplikator: 350
Stellvertreter
-