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ChinaBSD214SN L6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSD214SN L6327
BESCHREIBUNG
MOSFET N-CH 20V 1.5A SOT363-6
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount PG-SOT363-PO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
143 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT363-PO
Package / Case
6-VSSOP, SC-88, SOT-363
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
BSD214SN L6327INDKR-ND
BSD214SNL6327INDKR
BSD214SN L6327-ND
BSD214SNL6327
BSD214SNL6327HTSA1
BSD214SNL6327INCT
BSD214SN L6327INTR-ND
BSD214SN L6327INDKR
SP000440882
BSD214SN L6327INCT-ND
BSD214SN L6327INTR
BSD214SN L6327INCT
BSD214SNL6327INTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSD214SN L6327
Dokumente und Medien
Datasheets
1(BSD214SN)
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1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSD214SN)
Menge Preis
-
Stellvertreter
Teil Nr. : BSD214SNH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 5,980
Einzelpreis. : $0.43000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 5,980
Einzelpreis. : $0.43000
Ersatztyp. : Parametric Equivalent