Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
5.2A (Ta), 4.7A (Ta)
Rds On (Max) @ Id, Vgs
50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 40V, 1000pF @ 20V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
ZXMC4A16