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TEILNUMMER DES HERSTELLERS
IPB160N04S2L03ATMA1
BESCHREIBUNG
MOSFET N-CH 40V 160A TO263-7
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB160N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPB160N04S2L-03
IPB160N04S2L-03-ND
IPB160N04S2L03ATMA1TR
SP000218153
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB160N04S2L03ATMA1
Dokumente und Medien
Datasheets
1(IPB160N04S2L-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB160N04S2L-03)
Menge Preis
-
Stellvertreter
Teil Nr. : SQM200N04-1M7L_GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $3.24000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $3.24000
Ersatztyp. : Similar