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China1N8033-GA
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
1N8033-GA
BESCHREIBUNG
DIODE SIL CARB 650V 4.3A TO276
DETAILIERTE BESCHREIBUNG
Diode 650 V 4.3A Surface Mount TO-276
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4.3A
Voltage - Forward (Vf) (Max) @ If
1.65 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Capacitance @ Vr, F
274pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-276AA
Supplier Device Package
TO-276
Operating Temperature - Junction
-55°C ~ 250°C
Base Product Number
1N8033
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
1N8033GA
1242-1120
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor 1N8033-GA
Dokumente und Medien
Datasheets
1(1N8033-GA)
Featured Product
1(Silicon Carbide Schottky Diode)
Menge Preis
-
Stellvertreter
-