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ChinaSI7621DN-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7621DN-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 4A PPAK1212-8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4A (Tc) 3.1W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7621
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI7621DN-T1-GE3CT
SI7621DNT1GE3
SI7621DN-T1-GE3DKR
SI7621DN-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7621DN-T1-GE3
Dokumente und Medien
Datasheets
1(SI7621DN)
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI7621DN)
Menge Preis
-
Stellvertreter
Teil Nr. : SI7615ADN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 72,050
Einzelpreis. : $0.72000
Ersatztyp. : Similar
Verfügbare Menge. : 72,050
Einzelpreis. : $0.72000
Ersatztyp. : Similar