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ChinaUPA2003C-A
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TEILNUMMER DES HERSTELLERS
UPA2003C-A
BESCHREIBUNG
NPN SILICON EPITAXIAL DARLINGTON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 900mW Through Hole 16-DIP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
299
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
7 NPN Darlington
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Power - Max
900mW
Frequency - Transition
-
Operating Temperature
-30°C ~ 75°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Supplier Device Package
16-DIP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNSUPA2003C-A
2156-UPA2003C-A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Renesas Electronics Corporation UPA2003C-A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 299
Einzelpreis: $1.01
Verpackung: Bulk
MinMultiplikator: 299
Verpackung: Bulk
MinMultiplikator: 299
Stellvertreter
-