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ChinaPUMH11/ZL135
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TEILNUMMER DES HERSTELLERS
PUMH11/ZL135
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,662
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230MHz
Power - Max
300mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
6-TSSOP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-PUMH11/ZL135
NEXNXPPUMH11/ZL135
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PUMH11/ZL135
Dokumente und Medien
Datasheets
1(PEMH11, PUMH11)
HTML Datasheet
1(PEMH11, PUMH11)
Menge Preis
-
Stellvertreter
-