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ChinaRF1S640SM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S640SM
BESCHREIBUNG
MOSFET N-CH 200V 18A TO263AB
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
110
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRF1S640SM
2156-RF1S640SM
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S640SM
Dokumente und Medien
Datasheets
1(RF1S640SM)
Menge Preis
QUANTITÄT: 110
Einzelpreis: $2.74
Verpackung: Bulk
MinMultiplikator: 110
Verpackung: Bulk
MinMultiplikator: 110
Stellvertreter
-