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ChinaAPT45GR65SSCD10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT45GR65SSCD10
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT NPT 650 V 118 A 543 W Surface Mount D3Pak
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
118 A
Current - Collector Pulsed (Icm)
224 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 45A
Power - Max
543 W
Input Type
Standard
Gate Charge
203 nC
Td (on/off) @ 25°C
15ns/100ns
Test Condition
433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr)
80 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
D3Pak
Base Product Number
APT45GR65
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-APT45GR65SSCD10
APT45GR65SSCD10-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT45GR65SSCD10
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Menge Preis
-
Stellvertreter
-