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ChinaUPA622TT-E1-A
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TEILNUMMER DES HERSTELLERS
UPA622TT-E1-A
BESCHREIBUNG
MOSFET N-CH 30V 3A 6WSOF
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 3A (Ta) 200mW (Ta) Surface Mount 6-WSOF
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
955
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Rds On (Max) @ Id, Vgs
82mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
155 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WSOF
Package / Case
6-SMD, Flat Leads
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-UPA622TT-E1-A
2156-UPA622TT-E1-A-RETR-ND
RENRNSUPA622TT-E1-A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation UPA622TT-E1-A
Dokumente und Medien
Datasheets
1(UPA622TT)
Menge Preis
QUANTITÄT: 955
Einzelpreis: $0.31
Verpackung: Bulk
MinMultiplikator: 955
Verpackung: Bulk
MinMultiplikator: 955
Stellvertreter
-