Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STB9NK70Z-1
BESCHREIBUNG
MOSFET N-CH 700V 7.5A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 700 V 7.5A (Tc) 115W (Tc) Through Hole I2PAK
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB9N

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB9NK70Z-1

Dokumente und Medien

Datasheets
1(STx9NK70Z(FP,-1))

Menge Preis

-

Stellvertreter

Teil Nr. : STI11NM80
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Direct