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ChinaIPI60R250CP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPI60R250CP
BESCHREIBUNG
COOLMOS N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 12A (Tc) 104W (Tc) Through Hole PG-TO262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
176
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-IPI60R250CP
IFEINFIPI60R250CP
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI60R250CP
Dokumente und Medien
Datasheets
1(IPI60R250CP Datasheet)
Menge Preis
QUANTITÄT: 176
Einzelpreis: $1.71
Verpackung: Bulk
MinMultiplikator: 176
Verpackung: Bulk
MinMultiplikator: 176
Stellvertreter
-