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ChinaBSM600D12P3G001
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM600D12P3G001
BESCHREIBUNG
SIC 2N-CH 1200V 600A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 600A (Tc) 2450W (Tc) Chassis Mount Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
19 Weeks
EDACAD-MODELL
STANDARDPAKET
4
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
600A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
31000pF @ 10V
Power - Max
2450W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM600
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM600D12P3G001
Dokumente und Medien
Datasheets
1(BSM600D12P3G001)
Product Training Modules
()
Video File
()
Featured Product
1(SiC Schottky Barrier Diodes)
HTML Datasheet
1(BSM600D12P3G001)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $1831.7
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-