Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFU2405PBF
BESCHREIBUNG
MOSFET N-CH 55V 56A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRFU2405

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001571782
Q8851986AAAA
64-4137PBF-NDL
*IRFU2405PBF
64-4137PBF-ND
64-4137PBF
2156-IRFU2405PBF-448

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU2405PBF

Dokumente und Medien

Datasheets
1(IRFR2405PbF, IRFU2405PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRFR2405PbF, IRFU2405PbF)

Menge Preis

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Stellvertreter

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