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ChinaSI4158DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4158DY-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 36.5A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 36.5A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5710 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4158
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4158DY-T1-GE3
Dokumente und Medien
Datasheets
1(SI4158DY)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SI4158DY)
Menge Preis
-
Stellvertreter
Teil Nr. : SI4186DY-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5,474
Einzelpreis. : $1.17000
Ersatztyp. : Similar
Verfügbare Menge. : 5,474
Einzelpreis. : $1.17000
Ersatztyp. : Similar