Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
LND150N3-G-P003
BESCHREIBUNG
MOSFET N-CH 500V 30MA TO92-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
7 Weeks
EDACAD-MODELL
LND150N3-G-P003 Models
STANDARDPAKET
2,000

Technische Daten

Mfr
Microchip Technology
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
740mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Base Product Number
LND150

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

LND150N3-G-P003CT
LND150N3-G-P003-ND
LND150N3-G-P003TR
LND150N3-G-P003DKR-ND
LND150N3-G-P003DKRINACTIVE
LND150N3-G-P003DKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology LND150N3-G-P003

Dokumente und Medien

Datasheets
1(LND150)
Environmental Information
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Fab Site Addition 14/Aug/2014)
PCN Packaging
()
HTML Datasheet
1(LND150)
EDA Models
1(LND150N3-G-P003 Models)

Menge Preis

QUANTITÄT: 2000
Einzelpreis: $0.52
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2000
QUANTITÄT: 100
Einzelpreis: $0.52
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 25
Einzelpreis: $0.55
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $0.68
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

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