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ChinaIRG8P25N120KD-EPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRG8P25N120KD-EPBF
BESCHREIBUNG
IRG8P25N120 - DISCRETE IGBT WITH
DETAILIERTE BESCHREIBUNG
IGBT 1200 V 40 A 180 W Through Hole TO-247AD
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
73
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
40 A
Current - Collector Pulsed (Icm)
45 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A
Power - Max
180 W
Switching Energy
800µJ (on), 900µJ (off)
Input Type
Standard
Gate Charge
135 nC
Td (on/off) @ 25°C
20ns/170ns
Test Condition
600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)
70 ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
INFIRFIRG8P25N120KD-EPBF
2156-IRG8P25N120KD-EPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/International Rectifier IRG8P25N120KD-EPBF
Dokumente und Medien
Datasheets
1(IRG8P25N120KD-EPBF Datasheet)
Menge Preis
QUANTITÄT: 73
Einzelpreis: $4.14
Verpackung: Bulk
MinMultiplikator: 73
Verpackung: Bulk
MinMultiplikator: 73
Stellvertreter
-