Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF7807D2
BESCHREIBUNG
MOSFET N-CH 30V 8.3A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Infineon Technologies
Series
FETKY™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Vgs (Max)
±12V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7807D2

Dokumente und Medien

Datasheets
1(IRF7807D2)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF7807D2)

Menge Preis

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