Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF6706S2TR1PBF
BESCHREIBUNG
MOSFET N-CH 25V 17A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DirectFET™ Isometric S1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF6706S2TR1PBFCT
IRF6706S2TR1PBFTR
SP001528294
IRF6706S2TR1PBFDKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6706S2TR1PBF

Dokumente und Medien

Datasheets
1(IRF6706S2TR(1)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $0.78658
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $0.8066
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $0.953
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.11
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

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