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ChinaBUK9515-100A127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK9515-100A127
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 75A (Tc) 230W (Tc) Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
293
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
8600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NEXNEXBUK9515-100A127
2156-BUK9515-100A127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9515-100A127
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
-
Stellvertreter
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