English
Spain
Rusia
Italy
ChinaAUIRF7738L2TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRF7738L2TR
BESCHREIBUNG
MOSFET N-CH 40V 35A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 35A (Ta), 130A (Tc) 3.3W (Ta), 94W (Tc) Surface Mount DIRECTFET L6
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 109A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
194 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7471 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.3W (Ta), 94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET L6
Package / Case
DirectFET™ Isometric L6
Base Product Number
AUIRF7738
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF7738L2TR
Dokumente und Medien
Datasheets
1(AUIRF7738L2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF7738L2TR(1))
Menge Preis
-
Stellvertreter
-