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ChinaBSM25GP120B2BOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM25GP120B2BOSA1
BESCHREIBUNG
IGBT MODULE 1200V
DETAILIERTE BESCHREIBUNG
IGBT Module Full Bridge 1200 V 45 A 230 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
IGBT Type
-
Configuration
Full Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
45 A
Power - Max
230 W
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 25A
Current - Collector Cutoff (Max)
500 µA
Input Capacitance (Cies) @ Vce
1.5 nF @ 25 V
Input
Three Phase Bridge Rectifier
NTC Thermistor
Yes
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM25G
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-BSM25GP120B2BOSA1
SP000101734
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies BSM25GP120B2BOSA1
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Menge Preis
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Stellvertreter
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