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ChinaFQI10N20CTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQI10N20CTU
BESCHREIBUNG
MOSFET N-CH 200V 9.5A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 9.5A (Tc) 72W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
740
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFQI10N20CTU
2156-FQI10N20CTU-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI10N20CTU
Dokumente und Medien
Datasheets
1(FQI10N20CTU)
Menge Preis
QUANTITÄT: 740
Einzelpreis: $0.41
Verpackung: Tube
MinMultiplikator: 740
Verpackung: Tube
MinMultiplikator: 740
Stellvertreter
-