English
Spain
Rusia
Italy
ChinaIRF7855PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF7855PBF
BESCHREIBUNG
MOSFET N-CH 60V 12A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRF7855PBF-IT
IFEINFIRF7855PBF
SP001575224
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7855PBF
Dokumente und Medien
Datasheets
1(IRF7855PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IRF7855PbF)
Simulation Models
1(IRF7855PBF Saber Model)
Menge Preis
-
Stellvertreter
Teil Nr. : FDS5672
Hersteller. : onsemi
Verfügbare Menge. : 7,498
Einzelpreis. : $1.64000
Ersatztyp. : Direct
Verfügbare Menge. : 7,498
Einzelpreis. : $1.64000
Ersatztyp. : Direct