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ChinaCTLT853-M833S BK
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CTLT853-M833S BK
BESCHREIBUNG
TRANS NPN 100V 6A TLM833S
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 6 A 190MHz 2.5 W Surface Mount TLM833S
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Box
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
340mV @ 500mA, 5A
Current - Collector Cutoff (Max)
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
2.5 W
Frequency - Transition
190MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
TLM833S
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp CTLT853-M833S BK
Dokumente und Medien
Datasheets
1(CTLT853-M833S)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(CEN13/CTL 20/Mar/2019)
HTML Datasheet
1(CTLT853-M833S)
Menge Preis
-
Stellvertreter
-