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ChinaNTLJS3113PT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTLJS3113PT1G
BESCHREIBUNG
MOSFET P-CH 20V 3.5A 6WDFN
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
µCool™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.7 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1329 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WDFN (2x2)
Package / Case
6-WDFN Exposed Pad
Base Product Number
NTLJS3113
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NTLJS3113PT1GOSTR
2832-NTLJS3113PT1G
2156-NTLJS3113PT1G-OS
NTLJS3113PT1GOSCT
NTLJS3113PT1GOSDKR
NTLJS3113PT1G-ND
ONSONSNTLJS3113PT1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTLJS3113PT1G
Dokumente und Medien
Datasheets
1(NTLJS3113P)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 08/Jul/2021)
PCN Packaging
1(Covering Tape/Material Chg 20/May/2016)
HTML Datasheet
1(NTLJS3113P)
Menge Preis
-
Stellvertreter
Teil Nr. : PMPB33XP,115
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 14,221
Einzelpreis. : $0.48000
Ersatztyp. : Similar
Verfügbare Menge. : 14,221
Einzelpreis. : $0.48000
Ersatztyp. : Similar