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ChinaSTX112-AP
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TEILNUMMER DES HERSTELLERS
STX112-AP
BESCHREIBUNG
TRANS NPN DARL 100V 2A TO92AP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 1.2 W Through Hole TO-92AP
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A, 4V
Power - Max
1.2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92AP
Base Product Number
STX112
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-497-12706-3
STX112AP
-497-12706-1
STX112-AP-ND
497-12706-1
497-12706-3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics STX112-AP
Dokumente und Medien
Datasheets
1(STX112/7)
HTML Datasheet
1(STX112/7)
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