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ChinaVMO650-01F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
VMO650-01F
BESCHREIBUNG
MOSFET N-CH 100V 690A Y3-DCB
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 690A (Tc) 2500W (Tc) Chassis Mount Y3-DCB
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
690A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
6V @ 130mA
Gate Charge (Qg) (Max) @ Vgs
2300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
59000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2500W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Y3-DCB
Package / Case
Y3-DCB
Base Product Number
VMO650
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
Q1434129
VMO650-01F-NDR
-VMO650-01F
VM0650-01F
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS VMO650-01F
Dokumente und Medien
Datasheets
1(VMO650-01F)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(VMO650-01F)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $217.51
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-