Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPW90R120C3XKSA1
BESCHREIBUNG
MOSFET N-CH 900V 36A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
IPW90R120C3XKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-21
Package / Case
TO-247-3
Base Product Number
IPW90R120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP002548896
IPW90R120C3XKSA1-ND
448-IPW90R120C3XKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW90R120C3XKSA1

Dokumente und Medien

Datasheets
1(IPW90R120C3)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPW90R120C3)
EDA Models
1(IPW90R120C3XKSA1 Models)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $9.34937
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $10.19292
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $11.24733
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $11.95033
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $14.76
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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