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ChinaHGT1S2N120CN
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HGT1S2N120CN
BESCHREIBUNG
N-CHANNEL IGBT
DETAILIERTE BESCHREIBUNG
IGBT NPT 1200 V 13 A 104 W Through Hole TO-262
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
148
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
13 A
Current - Collector Pulsed (Icm)
20 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2.6A
Power - Max
104 W
Switching Energy
96µJ (on), 355µJ (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25°C
25ns/205ns
Test Condition
960V, 2.6A, 51Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package
TO-262
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HGT1S2N120CN-FS
FAIFSCHGT1S2N120CN
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor HGT1S2N120CN
Dokumente und Medien
Datasheets
1(HGT1S2N120CN)
Menge Preis
QUANTITÄT: 148
Einzelpreis: $2.03
Verpackung: Tube
MinMultiplikator: 148
Verpackung: Tube
MinMultiplikator: 148
Stellvertreter
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