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TEILNUMMER DES HERSTELLERS
IPP023NE7N3G
BESCHREIBUNG
MOSFET N-CH 75V 120A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP023N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP023NE7N3G
Dokumente und Medien
Datasheets
1(IPI, IPP023NE7N3 G)
HTML Datasheet
1(IPI, IPP023NE7N3 G)
Menge Preis
-
Stellvertreter
Teil Nr. : IPP023NE7N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 460
Einzelpreis. : $6.41000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 460
Einzelpreis. : $6.41000
Ersatztyp. : Parametric Equivalent