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ChinaGB35XF120K
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TEILNUMMER DES HERSTELLERS
GB35XF120K
BESCHREIBUNG
IGBT MODULE 1200V 50A 284W
DETAILIERTE BESCHREIBUNG
IGBT Module NPT Three Phase Inverter 1200 V 50 A 284 W Chassis Mount
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Product Status
Obsolete
IGBT Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
284 W
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 50A
Current - Collector Cutoff (Max)
100 µA
Input Capacitance (Cies) @ Vce
3.475 nF @ 30 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
ECONO2
Supplier Device Package
-
Base Product Number
GB35
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Vishay General Semiconductor - Diodes Division GB35XF120K
Dokumente und Medien
Datasheets
1(GB35XF120K)
HTML Datasheet
1(GB35XF120K)
Menge Preis
-
Stellvertreter
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