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ChinaBSO211PHXUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSO211PHXUMA1
BESCHREIBUNG
MOSFET 2P-CH 20V 4A 8DSO
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 4A 1.6W Surface Mount PG-DSO-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
67mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1095pF @ 15V
Power - Max
1.6W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Base Product Number
BSO211
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BSO211PHXUMA1
BSO211P H-ND
SP000613844
INFINFBSO211PHXUMA1
BSO211P H
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSO211PHXUMA1
Dokumente und Medien
Datasheets
1(BSO211P H)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSO211P H)
Simulation Models
1(MOSFET OptiMOS™ 20V P-Channel Spice Model)
Menge Preis
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