Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1886 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
980mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
POWERDI3333-8
Package / Case
8-PowerVDFN