English
Spain
Rusia
Italy
ChinaFQD1P50TF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQD1P50TF
BESCHREIBUNG
MOSFET P-CH 500V 1.2A DPAK
DETAILIERTE BESCHREIBUNG
P-Channel 500 V 1.2A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQD1P50TF Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
FQD1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD1P50TF
Dokumente und Medien
Datasheets
1(FQD1P50, FQU1P50)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQD1P50, FQU1P50)
EDA Models
1(FQD1P50TF Models)
Menge Preis
-
Stellvertreter
-