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ChinaFF3MR12KM1HOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF3MR12KM1HOSA1
BESCHREIBUNG
SIC 2N-CH 1200V 375A AG-62MM
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 375A (Tc) Chassis Mount AG-62MM
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
FF3MR12KM1HOSA1 Models
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
375A (Tc)
Rds On (Max) @ Id, Vgs
2.83mOhm @ 375A, 15V
Vgs(th) (Max) @ Id
5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs
1000nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
29800pF @ 25V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MM
Base Product Number
FF3MR12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-FF3MR12KM1HOSA1
2156-FF3MR12KM1HOSA1
SP001686348
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF3MR12KM1HOSA1
Dokumente und Medien
Datasheets
1(FF3MR12KM1H)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFETs and Diodes)
EDA Models
1(FF3MR12KM1HOSA1 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FF2MR12KM1H
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended