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ChinaCSD18503KCS
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CSD18503KCS
BESCHREIBUNG
CSD18503KCS 40V, N CHANNEL NEXFE
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 100A (Tc) 188W (Tc) Through Hole TO-220-3
HERSTELLER
National Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
362
Lagerbestände
Technische Daten
Mfr
National Semiconductor
Series
NexFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3150 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-CSD18503KCS
TEXNSCCSD18503KCS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/National Semiconductor CSD18503KCS
Dokumente und Medien
Datasheets
1(CSD18503KCS Datasheet)
Menge Preis
QUANTITÄT: 362
Einzelpreis: $0.83
Verpackung: Bulk
MinMultiplikator: 362
Verpackung: Bulk
MinMultiplikator: 362
Stellvertreter
-