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ChinaPBSS4230PANP,115
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TEILNUMMER DES HERSTELLERS
PBSS4230PANP,115
BESCHREIBUNG
NOW NEXPERIA PBSS4230PANP - SMAL
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 2A 120MHz 510mW Surface Mount 6-HUSON (2x2)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,764
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
290mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
510mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PBSS4230
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
NEXNXPPBSS4230PANP,115
2156-PBSS4230PANP,115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4230PANP,115
Dokumente und Medien
Datasheets
1(PBSS4230PANP,115 Datasheet)
Menge Preis
QUANTITÄT: 1764
Einzelpreis: $0.17
Verpackung: Bulk
MinMultiplikator: 1764
Verpackung: Bulk
MinMultiplikator: 1764
Stellvertreter
-