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ChinaTSM3N80CP ROG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM3N80CP ROG
BESCHREIBUNG
MOSFET N-CHANNEL 800V 3A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 3A (Tc) 94W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
696 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TSM3N80
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TSM3N80CP ROGCT-ND
TSM3N80CP ROGDKR
TSM3N80CP ROGDKR-ND
TSM3N80CPROGCT
TSM3N80CP ROGTR-ND
TSM3N80CPROGTR
TSM3N80CP ROGCT
TSM3N80CP ROGTR
TSM3N80CPROGDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM3N80CP ROG
Dokumente und Medien
Datasheets
1(TSM3N80)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
Menge Preis
-
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