Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Rds On (Max) @ Id, Vgs
43mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 20 V
Power Dissipation (Max)
1.9W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.173", 4.40mm Width)