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TEILNUMMER DES HERSTELLERS
2SC3114S
BESCHREIBUNG
NPN EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 150 mA 100MHz 400 mW Through Hole 3-NP
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,323
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
150 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 1mA, 6V
Power - Max
400 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
ONSSNY2SC3114S
2156-2SC3114S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SC3114S
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 5323
Einzelpreis: $0.06
Verpackung: Bulk
MinMultiplikator: 5323
Verpackung: Bulk
MinMultiplikator: 5323
Stellvertreter
-