Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPW60R031CFD7XKSA1
BESCHREIBUNG
MOSFET N-CH 650V 63A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
IPW60R031CFD7XKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ CFD7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
31mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs
141 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5623 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW60R031

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001617992
IPW60R031CFD7XKSA1-ND
2156-IPW60R031CFD7XKSA1
448-IPW60R031CFD7XKSA1
IPW60R031CFD7

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW60R031CFD7XKSA1

Dokumente und Medien

Datasheets
1(IPW60R031CFD7)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPW60R031CFD7)
EDA Models
1(IPW60R031CFD7XKSA1 Models)
Simulation Models
1(MOSFET CoolMOS™ CFD7 600V Spice Model)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $6.90227
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $7.52504
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $8.3035
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $8.82233
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $10.9
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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