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ChinaFDI030N06
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDI030N06
BESCHREIBUNG
MOSFET N-CH 60V 120A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 231W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
151 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9815 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FDI030
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2832-FDI030N06-488
2832-FDI030N06
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDI030N06
Dokumente und Medien
Datasheets
1(FDI030N06)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Dev EOL 02/Oct/2023)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev 23/Oct/2023)
PCN Packaging
()
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $2.4699
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
Teil Nr. : NTBGS2D5N06C
Hersteller. : onsemi
Verfügbare Menge. : 796
Einzelpreis. : $6.06000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 796
Einzelpreis. : $6.06000
Ersatztyp. : MFR Recommended