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ChinaRN1105MFV,L3F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN1105MFV,L3F
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A VESM
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
RN1105MFV,L3F Models
STANDARDPAKET
8,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1105
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RN1105MFV(TL3T)TR
RN1105MFV,L3FCT
RN1105MFVTL3T
RN1105MFV(TL3T)DKR-ND
RN1105MFV(TL3T)CT-ND
RN1105MFV,L3F(B
RN1105MFV,L3FTR
RN1105MFV(TL3T)DKR
RN1105MFV(TL3T)TR-ND
RN1105MFV(TL3T)CT
RN1105MFV,L3F(T
RN1105MFV,L3FDKR
RN1105MFV(TL3,T)
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1105MFV,L3F
Dokumente und Medien
Datasheets
1(RN1101-6MFV)
PCN Packaging
1(Marking Chg 08/Feb/2016)
HTML Datasheet
1(RN1101-6MFV)
EDA Models
1(RN1105MFV,L3F Models)
Menge Preis
-
Stellvertreter
Teil Nr. : NSVDTC123JM3T5G
Hersteller. : onsemi
Verfügbare Menge. : 8,000
Einzelpreis. : $0.36000
Ersatztyp. : Similar
Verfügbare Menge. : 8,000
Einzelpreis. : $0.36000
Ersatztyp. : Similar