Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STH185N10F3-6
BESCHREIBUNG
MOSFET N-CH 100V 180A H2PAK-6
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
STMicroelectronics
Series
STripFET™ F3
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
114.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6665 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
315W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-6
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
STH185

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

497-15469-2
497-15469-1
-497-15469-1
-497-15469-2
-497-15469-6
497-15469-6

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STH185N10F3-6

Dokumente und Medien

Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Assembly/Origin
1(Mult Devices Testing 10/May/2018)
HTML Datasheet
1(STH185N10F3-6)

Menge Preis

QUANTITÄT: 1
Einzelpreis: $4.07
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $4.07
Verpackung: Digi-Reel®
MinMultiplikator: 1

Stellvertreter

Teil Nr. : IPB017N10N5LFATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 9,904
Einzelpreis. : $8.69000
Ersatztyp. : Similar