Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STF9N65M2
BESCHREIBUNG
MOSFET N-CH 650V 5A TO220FP
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 5A (Tc) 20W (Tc) Through Hole TO-220FP
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STF9N65M2 Models
STANDARDPAKET
50

Technische Daten

Mfr
STMicroelectronics
Series
MDmesh™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Base Product Number
STF9

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

497-15037-5
-497-15037-5

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STF9N65M2

Dokumente und Medien

Datasheets
1(ST(D,F,P,U)9N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
HTML Datasheet
1(ST(D,F,P,U)9N65M2)
EDA Models
1(STF9N65M2 Models)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $0.82698
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $0.9757
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.254
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.53
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

Teil Nr. : TK5A65W,S5X
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $1.54000
Ersatztyp. : Similar