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China2SC3665-Y,T2NSF(J
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3665-Y,T2NSF(J
BESCHREIBUNG
TRANS NPN 120V 0.8A MSTM
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 1 W Through Hole MSTM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Power - Max
1 W
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SC3665
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2SC3665YT2NSFJ
2SC3665-YT2NSF(J
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC3665-Y,T2NSF(J
Dokumente und Medien
Datasheets
1(2SC3665)
HTML Datasheet
1(2SC3665)
Menge Preis
-
Stellvertreter
-